Research
Contact
.:Lyudmila Goncharova
P&A Rm 231
(519) 661-2111 x81558
lgonchar@uwo.ca
FAX: (519) 661-2033

REFEREED PAPERS (2007-2014)
- O. Lobacheva, M. Chavarha, Y.M. Yiu, T.K. Sham, L.V. Goncharova (2014) The local structure and ferromagnetism in Fe-implanted SrTiO3 single crystals, Journal of Applied Physics, 116(1), 013901.pdf.
- S.N. Dedyulin, L.V. Goncharova (2014) Thermodynamic and kinetic control of the lateral Si wire growth, Applied Physics Letters, 104(12), 123103 pdf.
- E.G. Barbagiovanni, D.J. Lockwood, P.J. Simpson, L.V. Goncharova (2014)(Invited) Quantum confinement in Si and Ge nanostructures: Theory and experiment, Applied Physics Reviews, 1(1), 011302 pdf.
- S.N. Dedyulin, G. Fanchini, L.V. Goncharova (2014) Reticular growth of silicon ridges: random walk in two dimensions, Crystal Growth and Design, 14, 1193. pdf.
- S.N. Dedyulin, M.P. Singh, F.S. Razavi, L.V. Goncharova (2012) Energy loss of protons in SrTiO3 studied by medium energy ion scattering. NIMB 288, 60-65. pdf.
- E.G. Barbagiovanni, D.J. Lockwood, P.J. Simpson, and L.V. Goncharova (2012) Quantum Confinement in Si and Ge Nanostructures. J. Appl. Phys. 111, 034307.pdf.
- S.N. Dedyulin, L.V. Goncharova (2012) Thermal oxidation of Ge-implanted Si: Role of defects. NIMB 272, 334.pdf.
- E.G. Barbagiovanni, S.N. Dedyulin, P.J. Simpson, and L.V. Goncharova (2012) Ion beam studies of Ge diffusion in Al2O3 NIMB 272, 74.pdf.
- A. Romanenko, L.V. Goncharova (2011) Elastic recoil detection studies of near-surface hydrogen in cavity-grade niobium. Supercond. Sci. Tech. 24, 105017. pdf.
- S.M.M. Yee, D.A. Crandles, L.V. Goncharova (2011) Ferromagnetism on the unpolished surfaces of single crystal metal oxide substrates. J. Appl. Phys. 110, 033906. pdf
- E.G. Barbagiovanni, L.V. Goncharova, P.J. Simpson (2011) Electronic structure study of ion-implanted Si quantum dots in a SiO2 matrix: Analysis of quantum confinement theories. Phys.Rev. B 83, 035112. pdf.
- L.V. Goncharova, M. Dalponte, T. Feng, T. Gustafsson, E. Garfunkel, P.S. Lysaght, G. Bersuker (2011) Diffusion and interface growth in hafnium oxide and silicate ultra-thin films on Si (001). Phys. Rev. B 83, 115329. pdf.
- Z. Tun, J.J. Noel, T. Bohdanowicz, L.R. Cao, R.G. Downing, L.V. Goncharova (2010) Cold-neutron depth profiling as a research tool for the study of surface oxides on metals. Can. J. Phys. 88 (10) 751-758. pdf.
- E.G. Barbagiovanni, L.V. Goncharova, P.J. Simpson, N. Armstrong (2010) Optical Properties of Si Quantum Dots in Silica via an Implantation Mask, MRS Symp.Proceedings, 1208, (O7), 5-12. pdf.
- E.Z. Ciflikli, L.V. Goncharova, B.J. Hinch, M. Alcantra Ortigoza, S. Hong, T.S. Rahman (2010) The dynamics of a c(2x2) phase induced by nitrogen adsorption on Cu(001). Phys.Rev.B 81 (11), 115465. pdf.
- M. Dalponte, M.A. Adam, H. Boudinov, L.V. Goncharova, T. Feng, E. Garfunkel, T. Gustafsson (2009) Effect of excess vacancy concentration on As and Sb doping in Si. J. Physics D, 42 (16) 165106. pdf.
- J. Liu, W.N. Lennard, L.V. Goncharova, D. Landheer, X.H. Wu, S.A. Rushworth, A.C. Jones (2009) Atomic Layer Deposition of Hafnium Silicate Thin Films Using Tetrakis(diethylamido)hafnium and Tris(2-methyl-2-butoxy)silanol. J. Electrochemical Society, 156 G89-G96. pdf.
- J. Lallo, L.V. Goncharova, B.J. Hinch, S. Rangan, R.A. Bartynski, and D.R. Strongin (2008) Structural studies of sub-monolayer Sn/Cu(001) phases. Surface Science, 602, 2348. pdf.
- N. Goel, W. Tsai, C.M. Garner, Y. Sun, P. Pianettea, D.G. Schlom, L.V. Goncharova, E. Garfunkel, T. Gustafsson (2007) Band offsets between amorphous LaAlO3 and In0.53Ga0.47As. Applied Physics Letters, 91, 113515. pdf.
- Y. Wang, M.-T. Ho, L.V. Goncharova, L.S. Wielunski, S. Rivillon, Y.J. Chabal, T. Gustafsson, and N. Moumen (2007) Interface engineering and film characterization for atomic layer deposited ultra-thin hafnium oxide on silicon. Chemistry of Materials, 19, 3127. pdf.
- M. Dalponte, H. Boudinov, L.V. Goncharova, E. Garfunkel, T. Gustafsson (2007) MEIS study of antimony implantation in SIMOX and vacancy-rich Si(100). J. Physics D: Applied Physics, 40, 4222. pdf.
- L.V. Goncharova, O. Celik, T. Gustafsson, E. Garfunkel, M. Warusawithana, D.G. Schlom, H. Wen, M.B. Santos, S. Sayan, W. Tsai and N. Goel (2007) Interface Characterization in III-V CMOS Nanoelectronics. ECS Transactions, 11(4), 117. pdf.
- L.V. Goncharova, M. Dalponte, T. Gustafsson, O. Celik, E. Garfunkel, P.S. Lysaght, G. Bersuker (2007) Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks. J. Vac. Sci. Technol A, 25, 261. pdf.
- S.L. Harmer, R. Kolarova, L.V. Goncharova, W.N. Lennard, M.A. Munoz-Márquez, I.V. Mitchell and H.W. Nesbitt (2007) Surface structure of sphalerite studied by medium energy ion scattering and XPS. Surface Science, 601, 352. pdf.
- M. Caymax, S. Van Elshocht, M. Houssa, A. Delabie, T. Conard, M. Meuris, M.M. Heyns, A. Dimoulas, S. Spiga, M. Fanciulli, J.W. Seo, L.V. Goncharova (2006) HfO2 as gate dielectrics on Ge: Interfaces and deposition techniques. Materials Science and Engineering B, 135, 256. pdf.
- L.V. Goncharova, M. Dalponte, D.G. Starodub, E. Garfunkel, T. Gustafsson, P.S. Lysaght, B. Foran, J. Barnett and G.I. Bersuker (2006) Oxygen diffusion and reactions in Hf-based dielectrics. Applied Physics Letters, 89, 044108. pdf.
- M. Dalponte, H. Boudinov, L. V. Goncharova, E. Garfunkel and T. Gustafsson (2006) MEIS study of As implantation in O or N pre-implanted Si(001). Nuclear Instruments and Methods in Physics Research. Section B, 249, 874. pdf.
- L.V. Goncharova, D.G. Starodub, E. Garfunkel, T. Gustafsson, V. Vaithyanathan, D.G. Schlom (2006) Interface structure and thermal behaviour of epitaxial SrTiO3 thin films on Si(001). Journal of Applied Physics, 100, 014912. pdf.
- T. Gustafsson, E. Garfunkel, L.V. Goncharova, D. Starodub, R. Barnes, M. Dalponte, G. Bersuker, B. Foran, P. Lysaght, D.G. Schlom, V. Vaithyanathan, M. Hong, J.R. Kwo (2006) Structure, composition and order at interfaces of crystalline oxides and other high-K materials on silicon. NATO Science series "Defects in high-K gate dielectric stacks." E. Gusev (ed.), Springer, P. 349-360.
- D.J. Lichtenwalner, J.S. Jur, A.J. Kingon, M.P. Agustin, Y. Yang, S. Stemmer, L.V. Goncharova, T. Gustafsson, E. Garfunkel (2005) Lanthanum silicate gate dielectic stacks with sub-nanometer EOT utilizing an interfacial consumption reaction. Journal of Applied Physics 98, 024314. pdf.
- M. Hong, A. R. Kortan, P. Chang, Y. L. Huang, C. P. Chen, and H. Y. Chou, H. Y. Lee, J. Kwo, M.-W. Chu and C. H. Chen, L. V. Goncharova, E. Garfunkel, and T. Gustafsson (2005) High-quality nano-thickness single crystal Sc2O3 film grown on Si(111). Applied Physics Letters 87, 251902. pdf.
- A. Delabie, R. Puurunen, B. Brijs, M. Caymax, Th. Conard, B. Onsia, O. Richard, W. Vandervorst, Ch. Zhao, M.M. Viitanen, H.H. Brongersma, M. de Ridder, L.V. Goncharova, E. Garfunkel, T. Gustafsson, W. Tsai, M. Heyns, M. Meuris, P. Pijpers (2005) Atomic Layer Deposition of Hafnium Oxide on Germanium Substrates. Journal of Applied Physics, 97, 064104. pdf.
- R.T. Brewer, M.-T. Ho, K.Z. Zhang, L.V. Goncharova, D.G. Starodub, T. Gustafsson, Y.J. Chabal, N. Moumen (2004) Ammonia Pre-treatment for High-K Dielectric Growth on Silicon. Applied Physics Letters, 85, 3830-3832. pdf.
- X. Zhang, D.R. Strongin, L.V. Goncharova, A.V. Ermakov, and B.J. Hinch (2004) Thermal Chemistry of CH3 on Si/Cu(100); the role of Sn as a promoter. Journal of Physical Chemistry B 108, 16213-16219. pdf.
- M. Dalponte, H. Boudinov, L.V. Goncharova, D. Starodub, E. Garfunkel, T. Gustafsson (2004) Thermal activation of As implanted in Si and Separation-by-Implanted-Oxygen. Journal of Applied Physics, 96, 7388-7391. pdf.
- L.V. Goncharova, B.J. Hinch, A. Hellman, M. Hassel, M. Persson (2003) HD J not equal to 0 Bound State Resonances above the Cu (001) Surface: The Effects of Physisorption Anisotropy and the Observation of Anomalous Debye-Waller Behaviour at Resonance Conditions. Phys.Chem.Chem.Phys., 5, 877-882. pdf.
- L.V. Goncharova, S.K. Clowes, R.R. Fogg, A.V. Ermakov, and B.J. Hinch (2002) Phosphine Adsorption and the Production of Phosphide Phases on Cu (001). Surface Science, 515, 553-566. pdf.
- L.V. Goncharova, J. Braun, A.V. Ermakov, G.G. Bishop, D.-M. Smilgies and B.J. Hinch (2001) Cu (001) to HD Energy Transfer and Translational to Rotational Energy Conversion on Surface Scattering. Journal of Chemical Physics, 115, 7713-7724. pdf.
(2001-2007)
SELECTED CONFERENCE PRESENTATIONS
- L.V. Goncharova, "Interface characterization in future CMOS materials" Fourth Western Institute for Nanomaterials Science Workshop, London, ON, May 16, 2008. Oral presentation.
- L.V. Goncharova, "Gate metal-induced diffusion and interface reactions in metal oxide dielectrics" 4th International Workshop on High-Resolution Depth Profiling, Radebeul, Germany, June 17-21. Invited talk.
- L.V. Goncharova, O. Celik, T. Gustafsson, R. Garfunkel, N. Goel, S.Sayan, W. Tsai, "Interfacial engineering and electrical properties of Hf oxide films on InGaAs," APS March Meeting, Denver, CO, March 5-9, 2007. Oral presentation.
- L.V. Goncharova, T. Feng, T. Gustafsson, R. Garfunkel, "Ion scattering studies of high-k gate stacks: thermal stability and interdiffusion." MRS Meeting, Boston, MA, November 26-30, 2006. Oral presentation.
- M. Dalponte, H. Boudinov, L. V. Goncharova, T. Feng, E. Garfunkel and T. Gustafsson, "High-resolution depth profiling of implanted As and Sb in Si(001) with excess vacancy concentration." AVS Meeting, San Francisco, CA, November 12-17, 2006. Oral presentation.
- L.V. Goncharova, M. Dalponte, T. Gustafsson, R. Garfunkel, "Medium Energy Ion Scattering Study of Oxygen Diffusion-Reactions in High-K Dielectrics on Si." Electronic Materials Conference, University Park, PA, June 28-30, 2006. Oral Presentation.
- L.V. Goncharova, M. Dalponte, T. Gustafsson, R. Garfunkel, "Oxygen transport and interfacial layer engineering in high-K metal oxide gate stacks." APS Meeting, Baltimore, MD, March 13-19, 2006. Oral presentation.
- L.V. Goncharova, M. Dalponte, T. Gustafsson, E. Garfunkel, "Diffusion and reactions in metal oxide dielectric stacks." 20th Annual Symposium Laboratory for Surface Modification, Piscataway, NJ, March 2, 2005. Oral presentation.
- L.V. Goncharova, "Medium energy ion scattering study of oxygen transport and reactions in high-K dielectrics on Si." Department of Physics and Astronomy, University of Western Ontario, London, ON, January 16, 2006. Invited talk.
- L.V. Goncharova, D.G. Starodub, R. Barnes, E. Garfunkel, T. Gustafsson, G. Bersuker, B. Foran, P. Lysaght, "Ion scattering study of oxygen diffusion in ultra-thin high-k metal oxide gate stacks." Semiconductor Interface Specialists Conference, Washington DC, December 1-3, 2005. Oral presentation.
- L.V. Goncharova, D. Starodub, E. Garfunkel, T. Gustafsson, "Epitaxial Oxide films grown on Si studied by Medium Energy Ion Scattering." International workshop on high-resolution beam analysis, Bar Harbor, ME, May 23-26, 2005. Oral presentation.
- D.G. Starodub, L.V. Goncharova, E. Garfunkel, T. Gustafsson, D.G. Schlom, "Medium energy ion scattering studies of the structure and composition of epitaxial SrTiO3 films on silicon." AVS Meeting, Baltimore, MD, November 2-7, 2003. Oral presentation.
- L.V. Goncharova, D.V. Potapenko, B.J. Hinch, X. Zhang, D.R. Strongin, L. Wood, "Helium Atom Scattering Studies of Si-Cu (001) and Sn-Cu (001) Surface Alloys.", 49th AVS Meeting, Denver, CO, November 4-8, 2002. Oral presentation.
- L.V. Goncharova, A.V. Ermakov, B.J. Hinch, "HD scattering on Cu (001): Rotationally mediated bound state resonances and evidence for interaction of the bound states with the surface phonons", 48th AVS Meeting, San Francisco, CA, October 29-November 2, 2001. Oral presentation.
- L.V. Goncharova, S.K. Clowes, A.V. Ermakov and B.J. Hinch, "Structural and vibrational studies of PX3 adsorption on Cu(001) using high-resolution helium atom scattering." 10th International Conference on Solid Films and Surfaces, Princeton, NJ, July 9-13, 2000. Poster.